Features: • Part Identification - KMM5321204C2WG(1024 cycles/16ms Ref, SOJ, Gold)• Fast Page Mode with Extended Data Out• CAS-before-RAS refresh capability• RAS-only and hidden refresh capability• TTL compatible inputs and outputs• Single +5V ±10% power supply...
KMM5321204C2WG: Features: • Part Identification - KMM5321204C2WG(1024 cycles/16ms Ref, SOJ, Gold)• Fast Page Mode with Extended Data Out• CAS-before-RAS refresh capability• RAS-only and hidd...
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Features: • Part Identification - KMM5321200C2W(1024 cycles/16ms Ref, SOJ, Solder)• Fa...
Features: • Part Identification- KMM5321200C2WG(1024 cycles/16ms Ref, SOJ, Gold)• Fast...
Features: • Part Identification - KMM5321204C2W(1024 cycles/16ms Ref, SOJ, Solder)• Fa...
Item |
Symbol |
Rating |
Unit |
Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current |
VIN, VOUT VCC Tstg PD IOS |
-1 to +7.0 -1 to +7.0 -55 to +150 2 50 |
V V W mA |
The Samsung KMM5321204C2WG is a 1Mx32bits DynamicRAM high density memory module. The Samsung KMM5321204C2W consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ package mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5321204C2W is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.