Features: • Performance rangeMax Freq. (Speed)KMM374S403CT-G8 125MHz (8ns)KMM374S403CT-GH 100MHz (10ns)KMM374S403CT-GL 100MHz (10ns)• Burst Mode Operation• Auto & Self Refresh Capability (4096 cycles / 64ms)• LVTTL compatible inputs and outputs• Single 3.3V ± 0.3V...
KMM374S403CT: Features: • Performance rangeMax Freq. (Speed)KMM374S403CT-G8 125MHz (8ns)KMM374S403CT-GH 100MHz (10ns)KMM374S403CT-GL 100MHz (10ns)• Burst Mode Operation• Auto & Self Refresh ...
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Aluminum Electrolytic Capacitors - Snap In 680uF 350V 30X60
PARAMETER |
Symbol |
Value |
Units |
Voltage on any pin relative to VSS |
VIN, VOUT |
-1.0 ~ 4.6 |
V |
Voltage on Vcc Supply Relative to Vss |
VCC, VCCQ |
-1.0 ~ 4.6 |
V |
Storage Temperature |
TSTG |
-55 ~ +150 |
|
Power Dissipation |
PD |
18 |
W |
Short Circuit Current |
IOS |
50 |
mA |
The Samsung KMM374S403CT is a 4M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM374S403CT consists of eighteen CMOS 2M x 8 bit Synchronous DRAMs in TSOP-II 400mil package and a 1K or 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parellel for each SDRAM.
The KMM374S403CT is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.