Features: ·Part ldentification -KMM372V410CK(4096 cycles/32ms Ref.SOJ)·Fast Page Mode Operation·CAS -before-RAS Refresh capability·RAS-only and Hidden refresh capability·LVTTL compatible inputs and outputs ·Single 3.3V±0.3V power supply ·JEDEC standard pinout &Buffered PDpin·Buffered input exc...
KMM372V410CK: Features: ·Part ldentification -KMM372V410CK(4096 cycles/32ms Ref.SOJ)·Fast Page Mode Operation·CAS -before-RAS Refresh capability·RAS-only and Hidden refresh capability·LVTTL compatible inputs and ...
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Aluminum Electrolytic Capacitors - Snap In 680uF 350V 30X60
Item |
Symbol |
Rating |
Unit |
Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current |
VIN, VOUT VCC Tstg PD IOS |
-0.5 to +4.6 -0.5 to +4.6 -55 to +125 18 50 |
V V W mA |
* Permanent device damage may occur if ACSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to aCSolute maximum rating conditions for intended periods may affect device reliability.
The Samsung KMM372V410CK is a 4M*72bits Dynamic RAM high density memory module .The Samsung KMM372V410CK consists of eighteen CMOS 4M*4bits DRAMs in SOJ-300mil packages and two 16bits driver IC in 48pin TSSOP package mounted on a 168-pin glass-epoxy substrate .A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.The KMM372V410CK is a Dual In-line Memory Module and is intended for mounting into 168 pin edge connector sockets .