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KMM366S1623CT

Features: • Performance range Part No. Max Freq. (Speed) KMM366S1623CT-G8 125MHz (8ns @ CL=3) KMM366S1623CT-GH 100MHz (10ns @ CL=2) KMM366S1623CT-GL 100MHz (10ns @ CL=3)• Burst mode operation• Auto & self refresh capability (4096 Cycles/64m...

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SeekIC No. : 004386301 Detail

KMM366S1623CT: Features: • Performance range Part No. Max Freq. (Speed) KMM366S1623CT-G8 125MHz (8ns @ CL=3) KMM366S1623CT-GH 100MHz (10ns @ CL=2) KMM366S1623CT-GL 100MHz ...

KMM366S1623CT Data Sheet

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Part Number:
KMM366S1623CT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Performance range

Part No.
Max Freq. (Speed)
KMM366S1623CT-G8
125MHz (8ns @ CL=3)
KMM366S1623CT-GH
100MHz (10ns @ CL=2)
KMM366S1623CT-GL
100MHz (10ns @ CL=3)

• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ± 0.3V power supply
• MRS cycle with address key programs
   Latency (Access from column address)
   Burst length (1, 2, 4, 8 & Full page)
   Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Serial presence detect with EEPROM
• PCB : Height (1,375mil), double sided component


Specifications

Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
Power dissipation
PD
16
W
Short circuit current
IOS
50
mA

Note :
`Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
`Functional operation should be restricted to recommended operating condition.
`Exposure to higher than recommended voltage for extended periods of time could affect device reliability.


Description

The Samsung KMM366S1623CT is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM366S1623CT consists of sixteen CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM.

The KMM366S1623CT is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets.

Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.




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