KMM366S1623AT

DescriptionThe KMM366S1623AT is a kind of 16 M bit*64 synchronous dynamic RAM high density memory module. The KMM366S1623AT includes 16 CMOS 8M*8 bit with 4 banks synchronous DRAMs in TSOP-II 400 mil package and a 1K or 2K EEPROM in 8-pin SOP package on a 168-pin glass-epoxy substrate. Range of op...

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SeekIC No. : 004386300 Detail

KMM366S1623AT: DescriptionThe KMM366S1623AT is a kind of 16 M bit*64 synchronous dynamic RAM high density memory module. The KMM366S1623AT includes 16 CMOS 8M*8 bit with 4 banks synchronous DRAMs in TSOP-II 400 mi...

floor Price/Ceiling Price

Part Number:
KMM366S1623AT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Description

The KMM366S1623AT is a kind of 16 M bit*64 synchronous dynamic RAM high density memory module. The KMM366S1623AT includes 16 CMOS 8M*8 bit with 4 banks synchronous DRAMs in TSOP-II 400 mil package and a 1K or 2K EEPROM in 8-pin SOP package on a 168-pin glass-epoxy substrate. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.

There are some features as follows: (1)burst mode operation; (2)auto and self refresh capability (4096 cycles/64 ms); (3)LVTTL compatible inputs and outputs; (4)single 3.3 V powet supply; (5)all inputs are sampled at the positive going edge of the system clock; (6)serial prensence detect with EEPROM; (7)WCBR cycle with address key program, latency (access from column address), burst length (1, 2, 4, 8 & full page) and burst length (sequential & interleave).

The following is about the absolute maximum ratings: (1)voltage on any pin relative to VSS, VIN, vout: -1 to 4.6 V; (2)voltage on vdd supply relative to vss, VDD, VDDQ: -1 to 4.6 V; (3)storage temperature, Tstg: -55 to +150; (4)power dissipation, PD: 16 W; (5)short circuit current, IOS: 50 mA.




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