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KMB8D2N60QA

Features: ·VDSS=60V, ID=8.2A.·Drain-Source ON Resistance. RDS(ON) =22m (Max.) @ VGS=10V RDS(ON) =27m (Max.) @ VGS=4.5V·Super High Dense Cell DesignPinoutSpecifications CHARACTERISTIC SYMBOL PATING UNIT Drain Source Voltage VDSS 60 V Gate Source Voltage VGSS ...

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KMB8D2N60QA: Features: ·VDSS=60V, ID=8.2A.·Drain-Source ON Resistance. RDS(ON) =22m (Max.) @ VGS=10V RDS(ON) =27m (Max.) @ VGS=4.5V·Super High Dense Cell DesignPinoutSpecifications CHARACTERISTIC SYMBO...

KMB8D2N60QA Data Sheet

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Part Number:
KMB8D2N60QA
Supply Ability:
5000

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  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·VDSS=60V, ID=8.2A.
·Drain-Source ON Resistance. RDS(ON) =22m (Max.) @ VGS=10V RDS(ON) =27m (Max.) @ VGS=4.5V
·Super High Dense Cell Design


Pinout

Connection Diagram


Specifications

CHARACTERISTIC
SYMBOL
PATING
UNIT
Drain Source Voltage
VDSS
60
V
Gate Source Voltage
VGSS
±25
V
Drain Current

DC@TA=25
ID*

8.2
A
DC@TA=70
6.6
Pulsed
IDP
40
Drain Source Diode Forward Current
IS
3.0
A
Drain Power Dissipation
25
PD *
3.0
W
100
2.0
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-50~150
Thermal Resistance, Junction to Ambient
RthJA*
41
/W
Note : *Surface Mounted on 1 1 FR4 Board


Description

This KMB8D2N60QA Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for portable equipment and SMPS.




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