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KMB6D0DN30QA

Features: `VDSS=30V, ID=6A.`Drain-Source ON Resistance. RDS(ON) =28m (Max.) @VGS=10V RDS(ON) =42m (Max.) @VGS=4.5V`Super High Dense Cell Design`High Power and Current Handing CapabilityPinoutSpecifications CHARACTERISTIC SYMBOL PATING UNIT Drain Source Voltage VDSS 30 ...

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KMB6D0DN30QA: Features: `VDSS=30V, ID=6A.`Drain-Source ON Resistance. RDS(ON) =28m (Max.) @VGS=10V RDS(ON) =42m (Max.) @VGS=4.5V`Super High Dense Cell Design`High Power and Current Handing CapabilityPinoutSpecifi...

KMB6D0DN30QA Data Sheet

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Part Number:
KMB6D0DN30QA
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

`VDSS=30V, ID=6A.
`Drain-Source ON Resistance. RDS(ON) =28m (Max.) @VGS=10V RDS(ON) =42m (Max.) @VGS=4.5V
`Super High Dense Cell Design
`High Power and Current Handing Capability


Pinout

Connection Diagram


Specifications

CHARACTERISTIC
SYMBOL
PATING
UNIT
Drain Source Voltage
VDSS
30
V
Gate Source Voltage
VGSS
±20
V
Drain Current
DC
ID *
6
A
Pulsed (note1)
IDP
20
Drain Source Diode Forward Current
IS
1.3
A
Drain Power Dissipation
25
PD *
2
W
100
1.6
Maximum Junction Temperature
Tj
-50~150
Storage Temperature Range
Tstg
-50~150
Thermal Resistance, Junction to Ambient
RthJA*
78
/W
* : Surface Mounted on FR4 Board, t10sec.


Description

This KMB6D0DN30QA planer stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS.




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