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KMB4D0N30SA

Features: ·VDSS=30V, ID=4A·Drain-Source ON ResistanceRDS(ON) =47m (Max.) @ VGS=10VRDS(ON) =65m (Max.) @ VGS=4.5V·Super Hige Dense Cell DesignSpecifications CHARACTERISTIC SYMBOL PATING UNIT Drain Source Voltage VDSS 30 V Gate Source Voltage VGSS ±20 V ...

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KMB4D0N30SA: Features: ·VDSS=30V, ID=4A·Drain-Source ON ResistanceRDS(ON) =47m (Max.) @ VGS=10VRDS(ON) =65m (Max.) @ VGS=4.5V·Super Hige Dense Cell DesignSpecifications CHARACTERISTIC SYMBOL PATING ...

KMB4D0N30SA Data Sheet

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Part Number:
KMB4D0N30SA
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

·VDSS=30V, ID=4A
·Drain-Source ON Resistance
RDS(ON) =47m (Max.) @ VGS=10V
RDS(ON) =65m (Max.) @ VGS=4.5V
·Super Hige Dense Cell Design


Specifications

CHARACTERISTIC
SYMBOL
PATING
UNIT
Drain Source Voltage
VDSS
30
V
Gate Source Voltage
VGSS
±20
V
Drain Current

DC@TA=25
ID*

4.0
A

DC@TA=70
3.5
Pulsed
IDP
20
Drain Source Diode Forward Current
IS
1.04
A
Drain Power Dissipation
TA=25
PD *
1.25
W
TA=70
0.8
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~150
Thermal Resistance, Junction to Ambient
RthJA*
130
/W
Note : Surface Mounted on FR4 Board, t10sec.


Description

This KMB4D0N30SA Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS.




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