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KMB2D0N60SA

Features: ·VDSS=60V, ID=2A·Drain-Source ON ResistanceRDS(ON) =160m (Max.) @ VGS=10VRDS(ON) =220m (Max.) @ VGS=4.5V·Super Hige Dense Cell DesignSpecifications CHARACTERISTIC SYMBOL PATING UNIT Drain Source Voltage VDSS 60 V Gate Source Voltage VGSS ±20 V ...

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KMB2D0N60SA: Features: ·VDSS=60V, ID=2A·Drain-Source ON ResistanceRDS(ON) =160m (Max.) @ VGS=10VRDS(ON) =220m (Max.) @ VGS=4.5V·Super Hige Dense Cell DesignSpecifications CHARACTERISTIC SYMBOL PATIN...

KMB2D0N60SA Data Sheet

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Part Number:
KMB2D0N60SA
Supply Ability:
5000

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Product Details

Description



Features:

·VDSS=60V, ID=2A
·Drain-Source ON Resistance
RDS(ON) =160m (Max.) @ VGS=10V
RDS(ON) =220m (Max.) @ VGS=4.5V
·Super Hige Dense Cell Design


Specifications

CHARACTERISTIC
SYMBOL
PATING
UNIT
Drain Source Voltage
VDSS
60
V
Gate Source Voltage
VGSS
±20
V
Drain Current

DC@TA=25
ID*

2.0
A

DC@TA=70
1.6
Pulsed
IDP
10
Drain Source Diode Forward Current
IS
1.0
A
Drain Power Dissipation
TA=25
PD *
1.25
W
TA=70
0.8
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~150
Thermal Resistance, Junction to Ambient
RthJA*
100
/W
Note : Package Mounted on 99.5% Alumina (10 x 8 x 0.6mm)


Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS.




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