Position: Home  > All Categories> Integrated Circuits (ICs) > KMB2D0N60SA

KMB2D0N60SA

Features: ·VDSS=60V, ID=2A·Drain-Source ON ResistanceRDS(ON) =160m (Max.) @ VGS=10VRDS(ON) =220m (Max.) @ VGS=4.5V·Super Hige Dense Cell DesignSpecifications CHARACTERISTIC SYMBOL PATING UNIT Drain Source Voltage VDSS 60 V Gate Source Voltage VGSS ±20 V ...

product image

KMB2D0N60SA Picture
See larger image
SeekIC No. : 004386268 Detail

KMB2D0N60SA: Features: ·VDSS=60V, ID=2A·Drain-Source ON ResistanceRDS(ON) =160m (Max.) @ VGS=10VRDS(ON) =220m (Max.) @ VGS=4.5V·Super Hige Dense Cell DesignSpecifications CHARACTERISTIC SYMBOL PATIN...

KMB2D0N60SA Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
KMB2D0N60SA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/20

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·VDSS=60V, ID=2A
·Drain-Source ON Resistance
RDS(ON) =160m (Max.) @ VGS=10V
RDS(ON) =220m (Max.) @ VGS=4.5V
·Super Hige Dense Cell Design


Specifications

CHARACTERISTIC
SYMBOL
PATING
UNIT
Drain Source Voltage
VDSS
60
V
Gate Source Voltage
VGSS
±20
V
Drain Current

DC@TA=25
ID*

2.0
A

DC@TA=70
1.6
Pulsed
IDP
10
Drain Source Diode Forward Current
IS
1.0
A
Drain Power Dissipation
TA=25
PD *
1.25
W
TA=70
0.8
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~150
Thermal Resistance, Junction to Ambient
RthJA*
100
/W
Note : Package Mounted on 99.5% Alumina (10 x 8 x 0.6mm)


Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Optical Inspection Equipment
AA924
A21K4B
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Audio Products
HUC1002
WM-64CT
Kits
IT243
UVSC-110-4E1
Discrete Semiconductor Products
T508N12TOF
MUR20040
View more