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KMB014P30QA

Features: ·VDSS=-30V, ID=-14A.·Drain-Source ON Resistance.RDS(ON) =10m (Max.) @ VGS=-10VRDS(ON) =18m (Max.) @ VGS=-4.5V·Super High Dense Cell DesignPinoutSpecifications CHARACTERISTIC SYMBOL PATING UNIT Drain Source Voltage VDSS -30 V Gate Source Voltage VGSS ...

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KMB014P30QA: Features: ·VDSS=-30V, ID=-14A.·Drain-Source ON Resistance.RDS(ON) =10m (Max.) @ VGS=-10VRDS(ON) =18m (Max.) @ VGS=-4.5V·Super High Dense Cell DesignPinoutSpecifications CHARACTERISTIC SYMB...

KMB014P30QA Data Sheet

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Part Number:
KMB014P30QA
Supply Ability:
5000

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Upload time: 2024/12/21

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Product Details

Description



Features:

·VDSS=-30V, ID=-14A.
·Drain-Source ON Resistance.
RDS(ON) =10m (Max.) @ VGS=-10V
RDS(ON) =18m (Max.) @ VGS=-4.5V
·Super High Dense Cell Design


Pinout

Connection Diagram


Specifications

CHARACTERISTIC
SYMBOL
PATING
UNIT
Drain Source Voltage
VDSS
-30
V
Gate Source Voltage
VGSS
±25
V
Drain Current
DC
ID*
-14
A
Pulsed
IDP
-70
A
Drain Source Diode Forward Current
IS
-1.7
A
Drain Power Dissipation
PD*
2.5
W
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~150
Thermal Resistance, Junction to Ambient
RthJA*
150
/W
Note : *Surface Mounted on FR4 Board


Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance,, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for portable equipment and SMPS.




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