Features: ·VDSS=-30V, ID=-14A.·Drain-Source ON Resistance.RDS(ON) =10m (Max.) @ VGS=-10VRDS(ON) =18m (Max.) @ VGS=-4.5V·Super High Dense Cell DesignPinoutSpecifications CHARACTERISTIC SYMBOL PATING UNIT Drain Source Voltage VDSS -30 V Gate Source Voltage VGSS ...
KMB014P30QA: Features: ·VDSS=-30V, ID=-14A.·Drain-Source ON Resistance.RDS(ON) =10m (Max.) @ VGS=-10VRDS(ON) =18m (Max.) @ VGS=-4.5V·Super High Dense Cell DesignPinoutSpecifications CHARACTERISTIC SYMB...
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Features: ·VDSS=-30V, ID=-10A.·Drain-Source ON Resistance.RDS(ON) =20m (Max.) @ VGS=-10VRDS(ON) =2...
CHARACTERISTIC |
SYMBOL |
PATING |
UNIT | |
Drain Source Voltage |
VDSS |
-30 |
V | |
Gate Source Voltage |
VGSS |
±25 |
V | |
Drain Current |
DC |
ID* |
-14 |
A |
Pulsed |
IDP |
-70 |
A | |
Drain Source Diode Forward Current |
IS |
-1.7 |
A | |
Drain Power Dissipation |
PD* |
2.5 |
W | |
Maximum Junction Temperature |
Tj |
150 |
||
Storage Temperature Range |
Tstg |
-55~150 |
||
Thermal Resistance, Junction to Ambient |
RthJA* |
150 |
/W |
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance,, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for portable equipment and SMPS.