KMA3D0N20SA

Features: ·VDSS=20V, ID=3A·Drain-Source ON ResistanceRDS(ON) =60m (Max.) @ VGS=4.5VRDS(ON) =120m (Max.) @ VGS=2.5V·Super Hige Dense Cell Design·VDSS=20V, ID=3A·Drain-Source ON ResistanceRDS(ON) =60m (Max.) @ VGS=4.5VRDS(ON) =120m (Max.) @ VGS=2.5V·Super Hige Dense Cell DesignSpecifications ...

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SeekIC No. : 004386261 Detail

KMA3D0N20SA: Features: ·VDSS=20V, ID=3A·Drain-Source ON ResistanceRDS(ON) =60m (Max.) @ VGS=4.5VRDS(ON) =120m (Max.) @ VGS=2.5V·Super Hige Dense Cell Design·VDSS=20V, ID=3A·Drain-Source ON ResistanceRDS(ON) =60m...

floor Price/Ceiling Price

Part Number:
KMA3D0N20SA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

·VDSS=20V, ID=3A
·Drain-Source ON Resistance
RDS(ON) =60m (Max.) @ VGS=4.5V
RDS(ON) =120m (Max.) @ VGS=2.5V
·Super Hige Dense Cell Design


·VDSS=20V, ID=3A
·Drain-Source ON Resistance
RDS(ON) =60m (Max.) @ VGS=4.5V
RDS(ON) =120m (Max.) @ VGS=2.5V
·Super Hige Dense Cell Design







Specifications

CHARACTERISTIC
SYMBOL
PATING
UNIT
Drain Source Voltage
VDSS
20
V
Gate Source Voltage
VGSS
±10
V
Drain Current

DC

ID*

3

A
Pulsed
IDP
12
Drain Source Diode Forward Current
IS
1.25
A
Drain Power Dissipation
TA=25
PD *
1.25
W
TA=70
0.8
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~150
Thermal Resistance, Junction to Ambient
RthJA*
100
/W
Note : Surface Mounted on FR4 Board, t 10sec.

CHARACTERISTIC
SYMBOL
PATING
UNIT
Drain Source Voltage
VDSS
20
V
Gate Source Voltage
VGSS
±10
V
Drain Current

DC

ID*

3

A
Pulsed
IDP
12
Drain Source Diode Forward Current
IS
1.25
A
Drain Power Dissipation
TA=25
PD *
1.25
W
TA=70
0.8
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~150
Thermal Resistance, Junction to Ambient
RthJA*
100
/W
Note : Surface Mounted on FR4 Board, t 10sec.






Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS.






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