Features: ·VDSS=20V, ID=3A·Drain-Source ON ResistanceRDS(ON) =60m (Max.) @ VGS=4.5VRDS(ON) =120m (Max.) @ VGS=2.5V·Super Hige Dense Cell Design·VDSS=20V, ID=3A·Drain-Source ON ResistanceRDS(ON) =60m (Max.) @ VGS=4.5VRDS(ON) =120m (Max.) @ VGS=2.5V·Super Hige Dense Cell DesignSpecifications ...
KMA3D0N20SA: Features: ·VDSS=20V, ID=3A·Drain-Source ON ResistanceRDS(ON) =60m (Max.) @ VGS=4.5VRDS(ON) =120m (Max.) @ VGS=2.5V·Super Hige Dense Cell Design·VDSS=20V, ID=3A·Drain-Source ON ResistanceRDS(ON) =60m...
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CHARACTERISTIC |
SYMBOL |
PATING |
UNIT | |
Drain Source Voltage |
VDSS |
20 |
V | |
Gate Source Voltage |
VGSS |
±10 |
V | |
Drain Current |
DC |
ID* |
3 |
A |
Pulsed |
IDP |
12 | ||
Drain Source Diode Forward Current |
IS |
1.25 |
A | |
Drain Power Dissipation |
TA=25 |
PD * |
1.25 |
W |
TA=70 |
0.8 | |||
Maximum Junction Temperature |
Tj |
150 |
||
Storage Temperature Range |
Tstg |
-55~150 |
||
Thermal Resistance, Junction to Ambient |
RthJA* |
100 |
/W |
CHARACTERISTIC |
SYMBOL |
PATING |
UNIT | |
Drain Source Voltage |
VDSS |
20 |
V | |
Gate Source Voltage |
VGSS |
±10 |
V | |
Drain Current |
DC |
ID* |
3 |
A |
Pulsed |
IDP |
12 | ||
Drain Source Diode Forward Current |
IS |
1.25 |
A | |
Drain Power Dissipation |
TA=25 |
PD * |
1.25 |
W |
TA=70 |
0.8 | |||
Maximum Junction Temperature |
Tj |
150 |
||
Storage Temperature Range |
Tstg |
-55~150 |
||
Thermal Resistance, Junction to Ambient |
RthJA* |
100 |
/W |
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS.