KM718V887

The KM718V887 is a 4,718,592 bit Synchronous Static Random Access Memory designed for support zero wait state performance for advanced Pentium/Power PC address pipelining. And with CS1 high, ADSP is blocked to control signal.

The KM718V887 is organized as 256K words of 18 bits and integrates address and control registers, a 2-bit burst address counter and high output drive circuitry onto a single integrated circuit for reduced components count implementation of high performance cache RAM applications.

Write cycles are internally self-timed and synchronous.

The self-timed write feature eliminates complex off chip write pulse shaping logic, simplifying the cache design and further reducing the component count.

Burst cycle can be initiated with either the address status processor( ADSP) or address status cache controller(ADSC) inputs. Subsequent burst addresses are generated internally in the system¢s burst sequence and are controlled by the burst address advance(ADV) input. ZZ pin controls Power Down State and reduces Stand-by current regardless of CLK.

The KM718V887 is implemented in SAMSUNG¢s high performance CMOS technology and is available in a 100pin TQFP package. Multiple power and ground pins are utilized to minimize ground bounce.