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KM62U256D

Features: • Process Technology : TFT• Organization : 32Kx8• Power Supply VoltageKM62V256D family : 2.7~3.3VKM62U256D family : 3.0~3.6V• Low Data Retention Voltage : 2V(Min)• Three state output and TTL Compatible• Package Type : 28-SOP-45028-TSOP1-0813.4F/RPinout...

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SeekIC No. : 004386141 Detail

KM62U256D: Features: • Process Technology : TFT• Organization : 32Kx8• Power Supply VoltageKM62V256D family : 2.7~3.3VKM62U256D family : 3.0~3.6V• Low Data Retention Voltage : 2V(Min)&#...

KM62U256D Data Sheet

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Part Number:
KM62U256D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Features:

• Process Technology : TFT
• Organization : 32Kx8
• Power Supply Voltage
KM62V256D family : 2.7~3.3V
KM62U256D family : 3.0~3.6V
• Low Data Retention Voltage : 2V(Min)
• Three state output and TTL Compatible
• Package Type : 28-SOP-450
28-TSOP1-0813.4F/R


Pinout

Connection Diagram


Specifications

Item
Symbol
Ratings
Unit
Remark
Voltage on any pin relative to Vss
VIN,VOUT
-0.5 to VCC+0.5
V
-
Voltage on Vcc supply relative to Vss
VCC
-0.5 to 4.6
V
-
Power Dissipation
PD
1.0
W
-
Storage temperature
TSTG
-65 to 150
-
Operating Temperature
TA
0 to 70
KM62V256DL, KM62U256DL
-25 to 85
KM62V256DLE, KM62U256DLE
-40 to 85
KM62V256DLI, KM62U256DLI
Soldering temperature and time
TSOLDER
260, 10sec (Lead Only)
-
-
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.


Description

The KM62V256D and KM62U256D families are fabricated by SAMSUNG¢s advanced CMOS process technology. The KM62U256D families support various operating temperature range and have various package types for user flexibility of system design. The KM62U256D families also support low data retention voltage for battery back-up operation with low data retention current.




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