Features: · Part Identification- KM416C1000B/B-L (5V, 4K Ref.)- KM416C1200B/B-L (5V, 1K Ref.)- KM416V1000B/B-L (3.3V, 4K Ref.)- KM416V1200B/B-L (3.3V, 1K Ref.)· Fast Page Mode operation· 2 CAS Byte/Word Read/Write operation· CAS-before-RAS refresh capability· RAS-only and Hidden refresh capability...
KM416C1000B: Features: · Part Identification- KM416C1000B/B-L (5V, 4K Ref.)- KM416C1200B/B-L (5V, 1K Ref.)- KM416V1000B/B-L (3.3V, 4K Ref.)- KM416V1200B/B-L (3.3V, 1K Ref.)· Fast Page Mode operation· 2 CAS Byte/...
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Parameter | Symbol | Rating 3.3V | Rating5V | Unit |
Voltage on any pin relative to VSS | VIN, VOUT | -0.5 to +4.6 | -1.0 to +7.0 | V |
Voltage on VCC supply relative to VSS | VCC | -0.5 to +4.6 | -1.0 to +7.0 | V |
Storage temperature | TSTG | -55 to +150 | -55 ~ +150 | °C |
Power dissipation | PD | 1.0 | 1.0 | W |
Short circuit current | IOS | 50 | 50 | mA |
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs KM416C1000B. Fast Page Mode KM416C1000B offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-5,-6 or -7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore- RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 Fast Page Mode DRAM family KM416C1000B is fabricated using Samsung's advanced CMOS process to realize high band-width, low power consumption and high reliability. KM416C1000B may be used as graphic memory unit for microcomputer, personal computer and portable machines.