KM41464A

The KM41464AZ is a kind of fully decoded 65,536*4 NMOS dynamic random access memory. The design is optimized for high speed, high performance applications such as computer memory, buffer memory, peripheral storage and environments where low power dissipation and compact layout are required. Besides, the device is fabricated using Samsung's advanced silicon gate NMOS process which permits maximum circuit density and minimal chip size with single transistor memory storage cells.

There are some features of KM41464A as follows: (1)page mode capability; (2)CAS-before-RAS refresh capability; (3)RAS-only and hidden refresh capability; (4)TTL compatible inputs and outputs; (5)early write or output enable controlled write; (6)single +5 V±10% power supply; (7)256 cycle/4ms refresh; (8)JEDEC standard pinout in 18-pin DIP, 18-lead PLCC and 20-pin ZIP.

The following is about the maximum ratings of KM41464A: (1)voltage on any pin relative to VSS, VIN or VOUT: -1 to +7.0 V; (2)voltage on VCC supply relative to VSS, VCC: -1 to +7.0 V; (3)storage temperature, Tstg: -55 to +150; (4)power dissipation, PD: 1.0 W; (5)short circuit output current, IOS: 50 mA.