KM4132G271A

· JEDEC standard 3.3V power supply
· LVTTL compatible with multiplexed address
· Dual bank / Pulse RAS
· MRS cycle with address key programs
    - CAS Latency (2, 3)
    - Burst Length (1, 2, 4, 8 & full page)
    - Burst Type (Sequential & Interleave)
· All inputs are sampled at the positive going edge of the system clock
· Burst Read Single-bit Write operation
· DQM 0-3 for byte masking
· Auto & self refresh
· 16ms refresh period (1K cycle)
· 100 Pin QFP

The KM4132G271A is 8,388,608 bits synchronous high data rate Dynamic RAM organized as 2 x 131,072 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the  use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length, and programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Write per bit and 8 columns block write improves performance in graphics systems.