Features: ·Super high dense cell trench design for low RDS(on).·Rugged and reliable.·Surface Mount package.Specifications Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous @ TA = 25 *1 ID 4.3 A -Pulse *2 ...
KI8205T: Features: ·Super high dense cell trench design for low RDS(on).·Rugged and reliable.·Surface Mount package.Specifications Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V ...
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Parameter | Symbol | Rating | Unit |
Drain-Source Voltage | VDS | 20 | V |
Gate-Source Voltage | VGS | ±12 | V |
Drain Current-Continuous @ TA = 25 *1 | ID | 4.3 | A |
-Pulse *2 | IDM | 21.5 | A |
Drain-Source Diode Forward Current *1 | IS | 1.7 | A |
Maximum Power Dissipation TA=25 *1 | PD | 1.25 | W |
TA=75 | PD | 0.75 | W |
Operating Junction and Storage Temperature Range | TJ,TSTG | - 55 to 150 | |
Thermal Resistance,Junction-to-Ambient | RthJA | 100 | /W |