Features: ·TrenchFET Power MOSFETS·Ultra Low rDS(on) and Excellent Power Handling In Compact FootprintSpecifications Parameter Symbol N-Channel P-Channel Unit 5 secs Steady State 5 secs Steady State Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±8 V Conti...
KI5515DC: Features: ·TrenchFET Power MOSFETS·Ultra Low rDS(on) and Excellent Power Handling In Compact FootprintSpecifications Parameter Symbol N-Channel P-Channel Unit 5 secs Steady State 5 sec...
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Parameter | Symbol | N-Channel | P-Channel | Unit | ||
5 secs | Steady State | 5 secs | Steady State | |||
Drain-Source Voltage | VDS | 20 | -20 | V | ||
Gate-Source Voltage | VGS | ±8 | V | |||
Continuous Drain Current (TJ = 150 )* TA = 25 | ID | 5.9 | 4.4 | -4.1 | -3 | A |
TA = 85 | 4.2 | 3.1 | -2.9 | -2.2 | A | |
Pulsed Drain Current | IDM | 20 | -15 | A | ||
Continuous Source Current (Diode Conduction)* | IS | 1.8 | 0.9 | -1.8 | -0.9 | A |
Maximum Power Dissipation* TA = 25 TA = 85 |
PD | 2.1 | 1.1 | 2.1 | 1.1 | W |
1.1 | 0.6 | 1.1 | 0.6 | W | ||
Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 |