Features: ·TrenchFET Power MOSFETS·Advanced High Cell Density ProcessSpecifications Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current(TJ=150 )* TA=25 ID -8.3-6.6 -6.2-5 A TA=70 Pulsed D...
KI4923DY: Features: ·TrenchFET Power MOSFETS·Advanced High Cell Density ProcessSpecifications Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS...
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Parameter | Symbol | 5 sec | Steady State | Unit | |
Drain-Source Voltage | VDS | -30 | V | ||
Gate-Source Voltage | VGS | ±20 | V | ||
Continuous Drain Current(TJ=150 )* |
TA=25 | ID | -8.3 -6.6 |
-6.2 -5 |
A |
TA=70 | |||||
Pulsed Drain Current | IDM | -30 | |||
Continuous Source Current* | IS | -1.7 | -0.9 | ||
Power Dissipation * |
TA=25 | PD | 2 | 1.1 | W |
TA=70 | 1.3 | 0.7 | |||
Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | °C | ||
Parameter | Symbol | Typ | Max | Unit | |
Maximum Junction-to-Ambient* | t10 sec | RthJA | 45 | 62.5 | °C/W |
Steady-State | 85 | 110 | |||
Maximum Junction-to-Foot (Drain) | Steady-State | RthJF | 26 | 35 |