KI4464DY Selling Leads, Price trend, KI4464DY DataSheet download, circuit diagram from SeekIC.com

Features: PWM Optimized for (Lowest Qg and Low RG)TrenchFET Power MOSFETSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ±8 V Continuous Drain Current (TJ=150 ) TA=25 TA=70 ID 2.21.7 ...

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SeekIC No. : 004385419 Detail

KI4464DY: Features: PWM Optimized for (Lowest Qg and Low RG)TrenchFET Power MOSFETSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 200 V Gate-...

KI4464DY Data Sheet

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Part Number:: KI4464DY
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/11/23

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Features: TrenchFET Power MOSFETSPinoutSpecifications Parameter Symbol 5 sec Steady State ...

Product Details

Description

Features:

PWM Optimized for (Lowest Q^g and Low R^G)
TrenchFET Power MOSFET

Specifications

Parameter	Symbol	10 secs	Steady State	Unit
Drain-Source Voltage	V_DS	200		V
Gate-Source Voltage	V_GS	±8		V
Continuous Drain Current (T_J=150 ) T_A=25 T_A=70	I_D	2.2 1.7	1.7 1.3	A
Pulsed Drain Current	I_DM	8
Avalanche Current* L = 0.1 mH	I_AS	3
Single Avalanche Energy L = 0.1 mH	E_AS	0.45		mJ
Continuous Source Current (diode conduction) *	I_S	2.1	1.2	A
Power Dissipation * T_A=25 T_A=70	P_D	2.5 1.6	1.5 0.9	W
Jumction Temperature and Storage Temperature	T_j.T_stg	-55 to 150

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KI4464DY

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