Features: Extremely Low QgdWFET Technology for Switching LossesTrenchFETTM Power MOSFETPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ=150 ) TA=25 TA=70 ...
KI4390DY: Features: Extremely Low QgdWFET Technology for Switching LossesTrenchFETTM Power MOSFETPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS...
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Parameter |
Symbol |
10 secs |
Steady State |
Unit |
Drain-Source Voltage |
VDS |
30 |
V | |
Gate-Source Voltage |
VGS |
±20 | ||
Continuous Drain Current (TJ=150 ) TA=25 TA=70 |
ID |
12.5 10 |
8.5 6.8 |
A |
Pulsed Drain Current |
IDM |
20 | ||
Continuous Source Current (diode conduction) * |
IS |
2.7 |
1.3 |
A |
Power Dissipation *TA=25 TA=70 |
PD |
3 1.9 |
1.3 1.4 |
W |
Operating Junction and Storage Temperature Range |
Tj.Tstg |
-55 to 150 |