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KI2314EDS

Features: TrenchFET Power MOSFETESD Protected: 3000 VPinoutSpecifications Parameter Symbol 5secs Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 Continuous Drain Current (TJ= 150 )*1 TA = 25 TA = 70 ID 4.9 3.77 A ...

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SeekIC No. : 004385406 Detail

KI2314EDS: Features: TrenchFET Power MOSFETESD Protected: 3000 VPinoutSpecifications Parameter Symbol 5secs Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage ...

KI2314EDS Data Sheet

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Part Number:
KI2314EDS
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Features:

TrenchFET Power MOSFET
ESD Protected: 3000 V


Pinout

Connection Diagram


Specifications

Parameter
Symbol
5secs
Steady State
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
Continuous Drain Current (TJ= 150 )*1       TA = 25
                                                                        TA = 70
ID
4.9
3.77
A
3.9
3
Pulsed Drain Current
IDM
15
Avalanche Current*2                                      L = 0.1 mH
IAS
15
Single Avalanche Energy                                 L = 0.1 mH
EAS
11.25
Continuous Source Current (Diode Conduction)*1
IS
1
Power Dissipation *1                                       TA = 25
                                                                         TA = 70
PD
1.25
0.75
W
0.8
0.48
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
*1 Surface Mounted on 1"X 1" FR4 Board.
*2 Pulse width limited by maximum junction temperature.


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