Features: P-Channel 1.25-W, 1.8-V (G-S) MOSFET.PinoutSpecifications Parameter Symbol Rating Unit Drain-source voltage VDS -8 V Gate-source voltage VGS ±8 V Continuous drain current (TJ = 150 ) TA=25 TA=70 ID ±3.5±2.8 A Pulsed drain current ID...
KI2305DS: Features: P-Channel 1.25-W, 1.8-V (G-S) MOSFET.PinoutSpecifications Parameter Symbol Rating Unit Drain-source voltage VDS -8 V Gate-source voltage VGS ±8 V C...
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Parameter |
Symbol |
Rating |
Unit |
Drain-source voltage |
VDS |
-8 |
V |
Gate-source voltage |
VGS |
±8 |
V |
Continuous drain current (TJ = 150 ) TA=25 TA=70 |
ID |
±3.5 ±2.8 |
A |
Pulsed drain current |
IDM |
±12 |
A |
Continuous source current (diode conduction) * |
IS |
-1.6 |
A |
Power dissipation * TA=25 TA=70 |
PD |
1.25 0.8 |
W |
Operating junction and storage temperature range |
Tj,Tstg |
-55 to +150 |
|
Junction-to-ambient * t 5 sec Steady State |
RthJA |
100 130 |
/W |