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KHB9D5N20P1

Features: VDSS=200V, ID=9.5ADrain-Source ON Resistance: RDS(ON)=400m @VGS = 10VQg(typ.)=18.5nCSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB9D5N20P1 KHB9D5N20F1KHB9D5N20F2 Drain-Source VoltageGate-Source Voltage VDSSVGSS 200±30 VV Drain Current @TC=25Pul...

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SeekIC No. : 004385361 Detail

KHB9D5N20P1: Features: VDSS=200V, ID=9.5ADrain-Source ON Resistance: RDS(ON)=400m @VGS = 10VQg(typ.)=18.5nCSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB9D5N20P1 KHB9D5N20F1KHB9D5N20F...

KHB9D5N20P1 Data Sheet

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Part Number:
KHB9D5N20P1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

VDSS=200V, ID=9.5A
Drain-Source ON Resistance
: RDS(ON)=400m @VGS = 10V
Qg(typ.)=18.5nC


Specifications

CHARACTERISTIC
SYMBOL
RATING
UNIT
KHB9D5N20P1
KHB9D5N20F1
KHB9D5N20F2
Drain-Source Voltage

Gate-Source Voltage
VDSS

VGSS
200

±30
V

V
Drain Current @TC=25
Pulsed(Note1)
ID
IDP
9.5
38
9.5*
38*
A
Single Pulsed Avalanche Energy (Note 2)

Repetitive Avalanche Energy (Note 1)

Peak Diode Recovery dv/dt (Note 3)
EAS

EAR

dv/dt
180

8.7

5.5
mJ

mJ

V/ns
Drain Power
Dissipation		 Tc=25
Derate above25
PD
87
0.7
40
0.32
W
W/
Maximum Junction Temperature

Storage Temperature Range
Tj

Tstg
150

-55 150


Thermal Characteristics
Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to- Ambient
RthJC

RthJA
1.44

62.5
3.13

62.5
/W

/W




Description

This planar stripe MOSFET KHB9D5N20P1 has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies.




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