Features: VDSS= 250V, ID= 8.8ADrain-Source ON Resistance :RDS(ON)=450m @VGS = 10VQg(typ.) = 29.5nCSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB9D5N20P1 KHB9D5N20F1KHB9D5N20F2 Drain-Source VoltageGate-Source Voltage VDSSVGSS 250±30 VV Drain Current @Tc=2...
KHB8D8N25P: Features: VDSS= 250V, ID= 8.8ADrain-Source ON Resistance :RDS(ON)=450m @VGS = 10VQg(typ.) = 29.5nCSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB9D5N20P1 KHB9D5N20F1KHB9D5...
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CHARACTERISTIC |
SYMBOL |
RATING |
UNIT | ||
KHB9D5N20P1 |
KHB9D5N20F1 KHB9D5N20F2 | ||||
Drain-Source Voltage Gate-Source Voltage |
VDSS VGSS |
250 ±30 |
V V | ||
Drain Current | @Tc=25 Pulsed(Note1) |
ID IDP |
8.8 35.2 |
8.8* 35.2* |
A |
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) |
EAS EAR dv/dt |
285 7.4 5.5 |
mJ mJ V/ns | ||
Drain Power Dissipation |
Ta=25 Derate above25 |
PD |
74 0.59 |
38 0.3 |
W W/ |
Maximum Junction Temperature Storage Temperature Range |
Tj Tstg |
150 -55 150 |
| ||
Thermal Characteristics | |||||
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to- Ambient |
RthJC RthJA |
1.69 62.5 |
3.29 62.5 |
/W /W |
* : Drain current limited by maximum junction temperature.
This planar stripe MOSFET KHB8D8N25P has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies.