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Features: VDSS= 250V, ID= 8.8ADrain-Source ON Resistance :RDS(ON)=450m @VGS = 10VQg(typ.) = 29.5nCSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB9D5N20P1 KHB9D5N20F1KHB9D5N20F2 Drain-Source VoltageGate-Source Voltage VDSSVGSS 250±30 VV Drain Current @Tc=2...

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SeekIC No. : 004385360 Detail

KHB8D8N25P: Features: VDSS= 250V, ID= 8.8ADrain-Source ON Resistance :RDS(ON)=450m @VGS = 10VQg(typ.) = 29.5nCSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB9D5N20P1 KHB9D5N20F1KHB9D5...

KHB8D8N25P Data Sheet

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Part Number:: KHB8D8N25P
Supply Ability:: 5000

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1~5000

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Upload time: 2024/12/24

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Product Details

Description

Features:

V_DSS= 250V, I_D= 8.8A
Drain-Source ON Resistance :
R_DS(ON)=450m @V_GS= 10V
Qg(typ.) = 29.5nC

Specifications

CHARACTERISTIC		SYMBOL	RATING		UNIT
			KHB9D5N20P1	KHB9D5N20F1 KHB9D5N20F2
Drain-Source Voltage Gate-Source Voltage		V_DSS V_GSS	250 ±30		V V
Drain Current	@Tc=25 Pulsed(Note1)	I_D I_DP	8.8 35.2	8.8* 35.2*	A
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)		E_AS E_AR dv/dt	285 7.4 5.5		mJ mJ V/ns
Drain Power Dissipation	Ta=25 Derate above25	P_D	74 0.59	38 0.3	W W/
Maximum Junction Temperature Storage Temperature Range		T_j T_stg	150 -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to- Ambient		R_thJC R_thJA	1.69 62.5	3.29 62.5	/W /W

* : Drain current limited by maximum junction temperature.

Description

This planar stripe MOSFET KHB8D8N25P has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies.

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KHB8D8N25P

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