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KHB6D0N40P

Features: VDSS=400V, ID=6.0ADrain-Source ON Resistance :RDS(ON)=1.0 @VGS=10VQg(typ.)=21nCSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB6D0N40P KHB6D0N40FKHB6D0N40F2 Drain-Source VoltageGate-Source Voltage VDSSVGSS 4000±30 VV Drain Current @Tc=25@Tc=100Pu...

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SeekIC No. : 004385353 Detail

KHB6D0N40P: Features: VDSS=400V, ID=6.0ADrain-Source ON Resistance :RDS(ON)=1.0 @VGS=10VQg(typ.)=21nCSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB6D0N40P KHB6D0N40FKHB6D0N40F2 Dr...

KHB6D0N40P Data Sheet

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Part Number:
KHB6D0N40P
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

VDSS=400V, ID=6.0A
Drain-Source ON Resistance :
RDS(ON)=1.0 @VGS=10V
Qg(typ.)=21nC


Specifications

CHARACTERISTIC
SYMBOL
RATING
UNIT
KHB6D0N40P
KHB6D0N40F
KHB6D0N40F2
Drain-Source Voltage

Gate-Source Voltage
VDSS

VGSS
4000

±30
V

V
Drain Current @Tc=25
@Tc=100

Pulsed(Note1)
ID

IDP
6.0
3.6

24
 6.0*
3.6*

24*
A
Single Pulsed Avalanche Energy (Note 2)

Repetitive Avalanche Energy (Note 1)

Peak Diode Recovery dv/dt (Note 3)
EAS

EAR

dv/dt
320

7.4

4.5
mJ

mJ

V/ns
Drain Power
Dissipation

Tc=25
Derate above25
PD
73
0.59
38
0.3
W
W/
Maximum Junction Temperature

Storage Temperature Range
Tj

Tstg
150

-55 150


Thermal Characteristics
Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to- Ambient
RthJC

RthCS

RthJA
1.71

0.5

62.5
3.31

-

62.5
/W

/W

/W

* : Drain current limited by maximum junction temperature.




Description

This planar stripe MOSFET KHB6D0N40P has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.




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