Features: ·VDSS= 500V, ID= 5.0A·Drain-Source ON Resistance : RDS(ON)=1.5 @VGS = 10V·Qg(typ.) = 21nCSpecifications CHARACTERISTIC SYMBOL Rating UNIT KHB5D0N50P KHB5D0N50FKHB5D0N50F2 Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Dra...
KHB5D0N50P: Features: ·VDSS= 500V, ID= 5.0A·Drain-Source ON Resistance : RDS(ON)=1.5 @VGS = 10V·Qg(typ.) = 21nCSpecifications CHARACTERISTIC SYMBOL Rating UNIT KHB5D0N50P KHB5D0N50FKHB5D...
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Features: ·VDSS= 500V, ID= 5.0A·Drain-Source ON Resistance : RDS(ON)=1.5 @VGS = 10V·Qg(typ.) = 21n...
Features: ·VDSS= 500V, ID= 5.0A·Drain-Source ON Resistance : RDS(ON)=1.5 @VGS = 10V·Qg(typ.) = 21n...
CHARACTERISTIC |
SYMBOL |
Rating |
UNIT | ||
KHB5D0N50P |
KHB5D0N50F KHB5D0N50F2 | ||||
Drain-Source Voltage |
VDSS |
500 |
V | ||
Gate-Source Voltage |
VGSS |
±30 |
V | ||
Drain Current | @TC=25 |
ID |
5.0 |
5.0* |
A |
@TC=100 |
2.9 |
2.9* | |||
Pulse (Note 1) |
IDP |
20 |
20* | ||
Single pulse Avalanche Energy (Note 2) |
EAS |
390 |
mJ | ||
Repetitive Avalanche Energy (Note 1) |
EAR |
9.2 |
mJ | ||
Peak Diode Recovery dv/dt (Note 3) |
dv/dt |
3.5 |
V/ns | ||
Drain Power Dissipation | TC=25 |
PD |
73 |
38 |
W |
Derate above 25 |
0.74 |
0.3 |
W/ | ||
Maximum Junction Temperature |
Tj |
150 |
|||
Storage temperature range |
TSTG |
-55~150 |
|||
Thermal Characteristics | |||||
Thermal Resistance, Junction-to-Case |
RthJC |
1.71 |
3.31 |
/W | |
Thermal Resistance, Case-to-Sink |
RthCS |
0.5 |
- |
/W | |
Thermal Resistance, Junction-to- Ambient |
RthJA |
62.5 |
62.5 |
/W |
* : Drain current limited by maximum junction temperature.
This planar stripe MOSFET KHB5D0N50P has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.