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KHB5D0N50P

Features: ·VDSS= 500V, ID= 5.0A·Drain-Source ON Resistance : RDS(ON)=1.5 @VGS = 10V·Qg(typ.) = 21nCSpecifications CHARACTERISTIC SYMBOL Rating UNIT KHB5D0N50P KHB5D0N50FKHB5D0N50F2 Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Dra...

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SeekIC No. : 004385352 Detail

KHB5D0N50P: Features: ·VDSS= 500V, ID= 5.0A·Drain-Source ON Resistance : RDS(ON)=1.5 @VGS = 10V·Qg(typ.) = 21nCSpecifications CHARACTERISTIC SYMBOL Rating UNIT KHB5D0N50P KHB5D0N50FKHB5D...

KHB5D0N50P Data Sheet

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Part Number:
KHB5D0N50P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·VDSS= 500V, ID= 5.0A
·Drain-Source ON Resistance : RDS(ON)=1.5 @VGS = 10V
·Qg(typ.) = 21nC



Specifications

CHARACTERISTIC
SYMBOL
Rating
UNIT
KHB5D0N50P
KHB5D0N50F
KHB5D0N50F2
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
VGSS
±30
V
Drain Current @TC=25
ID
5.0
5.0*
A
@TC=100
2.9
2.9*
Pulse (Note 1)
IDP
20
20*
Single pulse Avalanche Energy (Note 2)
EAS
390
mJ
Repetitive Avalanche Energy (Note 1)
EAR
9.2
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
3.5
V/ns
Drain Power Dissipation TC=25
PD
73
38
W
Derate above 25
0.74
0.3
W/
Maximum Junction Temperature
Tj
150
Storage temperature range
TSTG
-55~150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
RthJC
1.71
3.31
/W
Thermal Resistance, Case-to-Sink
RthCS
0.5
-
/W
Thermal Resistance, Junction-to- Ambient
RthJA
62.5
62.5
/W

* : Drain current limited by maximum junction temperature.




Description

This planar stripe MOSFET KHB5D0N50P has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.




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