Features: • Dual monolithic GaAs Power FET• High efficiency: 60% (typ.)• High gain: 25 dB• Specifications guaranteed to a fixed matching circuit at 3.5 V, 835 MHz• Package: 16PSSOPSpecifications Item Symbol Condition Unit Min. Max. Notes Drain-source vol...
KGF2236: Features: • Dual monolithic GaAs Power FET• High efficiency: 60% (typ.)• High gain: 25 dB• Specifications guaranteed to a fixed matching circuit at 3.5 V, 835 MHz• Pack...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Item | Symbol | Condition | Unit | Min. | Max. | Notes |
Drain-source voltage | VDSI | Ta = 25°C | V | - | 8.0 | Q1 |
Gate-source voltage | VGSI | Ta = 25°C | V | 6.0 | 0.4 | Q1 |
Drain current | IDSI | Ta = 25°C | A | - | 1.0 | Q1 |
Total power dissipation | Ptot1 | Ta = Tc = 25°C | W | - | 2.0 | Q1 |
Channel temperature | Tch1 | - | °C | - | 150 | Q1 |
Drain-source voltage | VDS2 | Ta = 25°C | V | - | 8.0 | Q2 |
Gate-source voltage | VGS2 | Ta = 25°C | V | 6.0 | 0.4 | Q2 |
Drain current | IDS2 | Ta = 25°C | A | - | 5.0 | Q2 |
Total power dissipation | Ptot2 | Ta = Tc = 25°C | W | - | 5.0 | Q2 |
Channel temperature | Tch2 | - | °C | - | 150 | Q2 |
Storage temperature | Tstg | - | °C | 45 | 150 |
The KGF2236, housed in a SMD-type plastic package, is a dual monolithic GaAs power FET that features high efficiency at 3 V. Since the KGF2236 is made up of Driver FET and Power FET, that is good to develop smaller and lighter. The KGF2236 specifications are guaranteed to fixed matching circuit of 3.5 V and 835 MHz; external impedance-matching circuit are also required. The KGF2236 provides high efficiency 60% (typical) with a 31.5 dBm (min. @Pin=7 dBm) output at 3.5 V. The device is optimized for transmitter-final-stage amplifiers in Portable Handy Phones (PHPs) and other 3 V analog cellular phone.