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KGF1637

Features: • High output power: 31.5 dBm (min.)• High efficiency: 70% (typ.)• Specifications guaranteed to a fixed matching circuit for 3.4 V and 850 MHz• Low thermal resistance: 20°C/W (typ.)• Package: 3PMMP (SOT-89 type)Specifications Item Symbol Condition Un...

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SeekIC No. : 004385300 Detail

KGF1637: Features: • High output power: 31.5 dBm (min.)• High efficiency: 70% (typ.)• Specifications guaranteed to a fixed matching circuit for 3.4 V and 850 MHz• Low thermal resistan...

KGF1637 Data Sheet

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Part Number:
KGF1637
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• High output power: 31.5 dBm (min.)
• High efficiency: 70% (typ.)
• Specifications guaranteed to a fixed matching circuit for 3.4 V and 850 MHz
• Low thermal resistance: 20°C/W (typ.)
• Package: 3PMMP (SOT-89 type)


Specifications

Item Symbol Condition Unit Min. Max.
Drain-source voltage VDS Ta = 25 V - 8
Gate-source voltage VGS Ta = 25 V 5.0 0.4
Drain current IDS Ta = 25 A - 4.5
Total power dissipation Ptot Ta = Tc = 25 W - 1.5
Channel temperature Tch - - 150
Storage temperature Tstg - 45 125



Description

The KGF1637, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that features high efficiency and high output power. The KGF1637 specifications are guaranteed to a fixed matching circuit for 3.4 V and 850 MHz; external impedance-matching circuits are also required. Because of its high efficiency more than 70 %, high output power (more than 31.5 dBm), and plastic package, the KGF1637 is ideal as a transmitter-final-stage amplifier for personal handy phones, such as 3-V analog cellular phones.




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