Features: • High output power: 27 dBm (min.)• High gain: 19 dB (typ.)• High efficiency: 70% (typ.)• Specifications guaranteed to a fixed matching circuit for 3.4 V and 850 MHz• Package: 3PMMP (SOT-89 type)Specifications Item Symbol Condition Unit Min. Max. ...
KGF1633: Features: • High output power: 27 dBm (min.)• High gain: 19 dB (typ.)• High efficiency: 70% (typ.)• Specifications guaranteed to a fixed matching circuit for 3.4 V and 850 MH...
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Item | Symbol | Condition | Unit | Min. | Max. |
Drain-source voltage | VDS | Ta = 25°C | V | - | 8 |
Gate-source voltage | VGS | Ta = 25°C | V | 5 | 0.4 |
Drain current | IDS | Ta = 25°C | mA | - | 2 |
Total power dissipation | Ptot | Ta =TC = 25°C | mW | - | 3 |
Channel temperature | Tch | - | °C | - | 150 |
Storage temperature | Tstg | - | °C | 45 | 125 |
The KGF1633, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that features high efficiency and high output power. The KGF1633 specifications are guaranteed to a fixed matching circuit for 3.4 V and 850 MHz; external impedance-matching circuits are also required. Because of its high efficiency, high output power (more than 27 dBm), and plastic package, the KGF1633 is ideal as a transmitter-drive amplifier for Personal Handy Phones (PHPs), and other 3-V digital cellular phones. This device is also suited to higher frequency applications.