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KGF1631

Features: • High output power: 24 dBm (min.)• High gain: 21dB (typ.)• High efficiency: 50% (typ.)• Specifications guaranteed to a fixed matching circuits for 3.4 V, 850 MHz• Package: 3PMMP (SOT-89 type)Specifications Item Symbol Condition Unit Min. Max. D...

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SeekIC No. : 004385298 Detail

KGF1631: Features: • High output power: 24 dBm (min.)• High gain: 21dB (typ.)• High efficiency: 50% (typ.)• Specifications guaranteed to a fixed matching circuits for 3.4 V, 850 MHz&#...

KGF1631 Data Sheet

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Part Number:
KGF1631
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

• High output power: 24 dBm (min.)
• High gain: 21dB (typ.)
• High efficiency: 50% (typ.)
• Specifications guaranteed to a fixed matching circuits for 3.4 V, 850 MHz
• Package: 3PMMP (SOT-89 type)


Specifications

Item Symbol Condition Unit Min. Max.
Drain-source voltage VDS Ta = 25°C V - 8
Gate-source voltage VGS Ta = 25°C V 6.0 0.4
Drain current IDS Ta = 25°C mA - 0.8
Total power dissipation Ptot Ta =TC = 25°C mW - 2
Channel temperature Tch - °C - 150
Storage temperature Tstg - °C 45 125



Description

The KGF1631, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that features high efficiency and high output power. The KGF1631 specifications are guaranteed to a fixed matching circuit for 3.4 V and 850 MHz; external impedance-matching circuits are also required. The KGF1631 provides an output power of more than 24dBm at 3.4V, with high efficiency (50% typ.) and high gain (21dB typ.). The device is optimized for transmitter driver amplifier applications for Portable Handy Phones (PHPs) and other 3-V cellular phones.




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