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KGF1608

Features: • High output power: 33 dBm (min.)• High efficiency: 70% (min.)• Specifications guaranteed to a fixed matching circuit for 3.4 V and 850 MHz• Low thermal resistance: 18/W (typ.)• Package: 3PFPSpecifications Item Symbol Condition Unit Min. ...

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SeekIC No. : 004385297 Detail

KGF1608: Features: • High output power: 33 dBm (min.)• High efficiency: 70% (min.)• Specifications guaranteed to a fixed matching circuit for 3.4 V and 850 MHz• Low thermal resistance...

KGF1608 Data Sheet

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Part Number:
KGF1608
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

• High output power: 33 dBm (min.)
• High efficiency: 70% (min.)
• Specifications guaranteed to a fixed matching circuit for 3.4 V and 850 MHz
• Low thermal resistance: 18/W (typ.)
• Package: 3PFP


Specifications

Item
Symbol
Condition
Unit
Min.
Max.
Drain-source voltage
VDS
Ta = 25
V
-
8
Gate-source voltage
VGS
Ta = 25
V
-45
0.4
Drain current
IDS
Ta = 25
A
-
5.5
Total power dissipation
Ptot
Ta = Tc = 25
W
-
5
Channel temperature
Tch
-
-
150
Storage temperature
Tstg
-
-45
125



Description

The KGF1608, housed in a SMD type ceramic package, is a discrete GaAs power FET that features high efficiency and high output power. The KGF1608 specifications are guaranteed to a fixed matching circuit for 3.4 V and 850 MHz; external impedance-matching circuits are also required. Because of its high efficiency (70% min.) , high output power (more than 33 dBm), the KGF1608 is ideal as a transmitter-final-stage amplifier for personal handy phones, such as 3-V digital cellular phones.




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