KGF1522

Features: • Low voltage and low current operation: 3 V, 5 mA (max.)• Specifications guaranteed to a fixed matching circuits for 3 V, 1.9 GHz• Low noise figure: 1.3 dB (typ.) at 1.9 GHz• High linear gain: 12.5 dB (typ.) at 1.9 GHz• High output power: 1 dB compression p...

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SeekIC No. : 004385295 Detail

KGF1522: Features: • Low voltage and low current operation: 3 V, 5 mA (max.)• Specifications guaranteed to a fixed matching circuits for 3 V, 1.9 GHz• Low noise figure: 1.3 dB (typ.) at 1.9...

floor Price/Ceiling Price

Part Number:
KGF1522
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

• Low voltage and low current operation: 3 V, 5 mA (max.)
• Specifications guaranteed to a fixed matching circuits for 3 V, 1.9 GHz
• Low noise figure: 1.3 dB (typ.) at 1.9 GHz
• High linear gain: 12.5 dB (typ.) at 1.9 GHz
• High output power: 1 dB compression point = 4.5 dBm (typ.) at 1.9 GHz
• Low distortion: 3rd-order intercept point = 17 dBm (typ.) at 1.9 GHz
• Self-bias circuit configuration with built-in source capacitor
• Package: 4PSOP



Specifications

Item
Symbol
Condition
Unit
Min.
Max.
Drain-Source voltage
VDS
Ta = 25°C
V
-
4.0
Gate-Source voltage
VGS
Ta = 25°C
V
-3.0
0.4
Drain current
IDS
Ta = 25°C
mA
-
50
Total power dissipation
Ptot
Ta = 25°C
mW
-
200
Channel temperature
Tch
-
-
150
Storage temperature
Tstg
-
45
125



Description

The KGF1522 is a high performance GaAs FET small-signal amplifier for L-band frequencies that eatures low voltage operation, low current operation, low noise, and low distortion. The GF1522 specifications are guaranteed to a fixed matching circuit for 3 V and 1.9 GHz; external mpedance-matching circuits are also required. Because of its high 3rd-order intercept point, ven at its low operating current, the KGF1522 is ideal as a signal amplifier for L-band personal andy phones, such as digital keying cordless phones that require low intermodulation properties.




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