Features: • Low voltage and low current operation: 3 V, 2.5 mA (max.)• Specifications guaranteed to a fixed matching circuit for 3 V, 1.9 GHz• Low noise figure: 1.8 dB (typ.) at 1.9 GHz• High linear gain: 12.5 dB (typ.) at 1.9 GHz• High output power: 1 dB compression ...
KGF1521: Features: • Low voltage and low current operation: 3 V, 2.5 mA (max.)• Specifications guaranteed to a fixed matching circuit for 3 V, 1.9 GHz• Low noise figure: 1.8 dB (typ.) at 1....
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Item |
Symbol |
Condition |
Unit |
Min. |
Max. |
Drain-Source voltage |
VDS |
Ta = 25°C |
V |
- |
4.0 |
Gate-Source voltage |
VGS |
Ta = 25°C |
V |
-3.0 |
0.4 |
Drain current |
IDS |
Ta = 25°C |
mA |
- |
50 |
Total power dissipation |
Ptot |
Ta = 25°C |
mW |
- |
200 |
Channel temperature |
Tch |
- |
|
- |
150 |
Storage temperature |
Tstg |
- |
|
45 |
125 |
The KGF1521 is a high-performance GaAs FET small-signal amplifier for L-band frequencies that eatures low voltage operation, low current operation, low noise, and low distortion. The GF1521 specifications are guaranteed to a fixed matching circuit for 3 V and 1.9 GHz; external mpedance-matching circuits are also required. Because of its high 3rd-order intercept point, ven at its low operating current, the KGF1521 is ideal as a small-signal amplifier for L-band ersonal handy phones, such as digital keying cordless phones that require low intermodu ation roperties.