Features: • Specifications guaranteed to a fixed matching circuit for 5.8 V and 850 MHz• High output power: 31.5 dBm (min.)• High efficiency: 70% (typ.)• Low thermal resistance: 14°C/W (typ.)• Package: 3PMMP (SOT-89 type)Specifications Item Symbol Condition Un...
KGF1323F: Features: • Specifications guaranteed to a fixed matching circuit for 5.8 V and 850 MHz• High output power: 31.5 dBm (min.)• High efficiency: 70% (typ.)• Low thermal resistan...
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Item | Symbol | Condition | Unit | Min. | Max. |
Drain-source voltage | VDS | Ta = 25°C | V | - | 10 |
Gate-source voltage | VGS | Ta = 25°C | V | 6.0 | 0.4 |
Drain current | IDS | Ta = 25°C | mA | - | 3.0 |
Total power dissipation | Ptot | Ta =TC = 25°C | mW | - | 5.0 |
Channel temperature | Tch | - | °C | - | 150 |
Storage temperature | Tstg | - | °C | 45 | 125 |
The KGF1323F, housed in a SOT-89 type plastic-mold package, is a KGF1323-based discrete GaAs power FET that features high efficiency and high output power. The KGF1323F specifications are guaranteed to a fixed matching circuit for 5.8 V and 850 MHz; external impedance-matching circuits are also required. Specified specifically for analog cellular applications, the KGF1323F is ideally suited to applications requiring a transmitter-final stage amplifier for a cellular phone, such as AMPS and TACS. The device is directly mounted to a printed circuit board.