Features: • High output power: 33 dBm (min.)• High efficiency: 70% (typ.)• Low thermal resistance: 23°C/W (typ.)• Package: 3PMMP (SOT-89 type)Specifications Item Symbol Condition Unit Min. Max. Drain-Source voltage VDS Ta = 25°C V - 1...
KGF1323: Features: • High output power: 33 dBm (min.)• High efficiency: 70% (typ.)• Low thermal resistance: 23°C/W (typ.)• Package: 3PMMP (SOT-89 type)Specifications Item Sy...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Item |
Symbol |
Condition |
Unit |
Min. |
Max. |
Drain-Source voltage |
VDS |
Ta = 25°C |
V |
- |
10 |
Gate-Source voltage |
VGS |
Ta = 25°C |
V |
-6.0 |
0.4 |
Drain current |
IDS |
Ta = 25°C |
A |
- |
3.0 |
Total power dissipation |
Ptot |
Ta = Tc = 25°C |
W |
- |
5 |
Channel temperature |
Tch |
- |
|
- |
150 |
Storage temperature |
Tstg |
- |
|
45 |
125 |
The KGF1323, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band power FET hat features high efficiency and high output power. The KGF1323 specifications are guaranteed o a fixed matching circuit for 5.8 V and 850 MHz; external impedance-matching circuits are also equired. Because of its high efficiency, high output power (more than 33 dBm), and plastic ackage, the KGF1323 is ideal as a transmitter-final-stage amplifier for personal handy phones, uch as TDMA-type cellular phones.