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KGF1322S

Features: • High output power: 33 dBm (min.)• High efficiency: 60% (min.)• Low thermal resistance: 18°C/W (typ.)• Package: 3PFPSpecifications Item Symbol Condition Unit Min. Max. Drain-source voltage VDS Ta = 25°C V - 10 Gate-source voltage VGS Ta = 2...

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SeekIC No. : 004385290 Detail

KGF1322S: Features: • High output power: 33 dBm (min.)• High efficiency: 60% (min.)• Low thermal resistance: 18°C/W (typ.)• Package: 3PFPSpecifications Item Symbol Condition Un...

KGF1322S Data Sheet

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Part Number:
KGF1322S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• High output power: 33 dBm (min.)
• High efficiency: 60% (min.)
• Low thermal resistance: 18°C/W (typ.)
• Package: 3PFP


Specifications

Item Symbol Condition Unit Min. Max.
Drain-source voltage VDS Ta = 25°C V - 10
Gate-source voltage VGS Ta = 25°C V 6.0 0.4
Drain current IDS Ta = 25°C mA - 3
Total power dissipation Ptot Ta =TC = 25°C mW - 5
Channel temperature Tch - °C - 150
Storage temperature Tstg - °C 45 125



Description

The KGF1322S, housed in a SMD-type ceramic package, is a discrete UHF-band power FET that features high efficiency, high output power, and low current operation. The KGF1322S specifications are guaranteed to a fixed matching circuit for 5.8 V and 850 MHz; external impedancematching
circuits are also required. Because of its high efficiency, high output power (more than 33 dBm), and SMD package, the KGF1322S is ideal as a transmitter-final-stage amplifier for personal handy phones, such as digital cellular phones.




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