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KGF1305T

Features: • High output power: 31.5 dBm (min.)• High efficiency: 66% (min.)• Low thermal resistance: 12°C/W (typ.)• Package: 3PHTPSpecifications Item Symbol Condition Unit Min. Max. Drain-Source voltage VDS Ta = 25°C V - 10 Gate-So...

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SeekIC No. : 004385285 Detail

KGF1305T: Features: • High output power: 31.5 dBm (min.)• High efficiency: 66% (min.)• Low thermal resistance: 12°C/W (typ.)• Package: 3PHTPSpecifications Item Symbol Cond...

KGF1305T Data Sheet

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Part Number:
KGF1305T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• High output power: 31.5 dBm (min.)
• High efficiency: 66% (min.)
• Low thermal resistance: 12°C/W (typ.)
• Package: 3PHTP


Specifications

Item
Symbol
Condition
Unit
Min.
Max.
Drain-Source voltage
VDS
Ta = 25°C
V
-
10
Gate-Source voltage
VGS
Ta = 25°C
V
-6.0
0.4
Drain current
IDS
Ta = 25°C
A
-
2
Total power dissipation
Ptot
Ta = Tc = 25°C
W
-
3
Channel temperature
Tch
-
-
150
Storage temperature
Tstg
-
45
125



Description

The KGF1305T, housed in a ceramic package with integrated heat sink, is a discrete UHF-band ower FET that features high efficiency, high output power, and low current operation. The GF1305T specifications are guaranteed to a fixed matching circuit for 5.4 V and 850 MHz; eternal impedance-matching circuits are also required. Because of its high efficiency, high output power (more than 31.5 dBm), and low thermal resistance, the KGF1305T is ideal as a transmitter-final-stage amplifier for personal handy phones, such as analog cellular phones.




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