Features: • Low current operation: 2.5 mA (max.)• High output power: 3 dBm (min.)• Low noise: 2 dB (max.)• Self-bias circuit configuration with built-in source capacitor• Package: 4PSOPSpecifications Item Symbol Condition Unit Min. Max. Drain-...
KGF1175B/1175: Features: • Low current operation: 2.5 mA (max.)• High output power: 3 dBm (min.)• Low noise: 2 dB (max.)• Self-bias circuit configuration with built-in source capacitor̶...
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Item |
Symbol |
Condition |
Unit |
Min. |
Max. |
Drain-Source voltage |
VDS |
Ta = 25°C |
V |
- |
7.0 |
Gate-Source voltage |
VGS |
Ta = 25°C |
V |
-3.0 |
0.4 |
Drain current |
IDS |
Ta = 25°C |
mA |
- |
60 |
Total power dissipation |
Ptot |
Ta = 25°C |
mW |
- |
200 |
Channel temperature |
Tch |
- |
|
- |
150 |
Storage temperature |
Tstg |
- |
|
45 |
125 |
The KGF1175B is a small-signal amplifier, for frequencies ranging from the UHF-band to the Lband, hat features low noise and low current operation. The KGF1175B specifications are uaranteed to a fixed matching circuit for 5 V and 850 MHz; external impedance-matching ircuits are also required. Because of the one-input dual gate configuration, low noise, and low perating current, the KGF1175B is ideal as a receiving-stage head amplifier for personal handy hones.
The KGF1175 is an amplifier similar to the KGF1175B in specifications and typical properties. lthough possessing S Parameters that are slightly different from those of the KGF1175B, the GF1175 meets the specifications for the KGF1175B, even with the same matching circuits as hose of the KGF1175B.