Features: • 940nm wavelength• Low forward voltage• High power and high reliability• Available for pulse operatingApplication• IR Audio and Telephone• Communication• Optical Switch• Available for wireless digital data transmissionSpecifications ...
KEL-3001A: Features: • 940nm wavelength• Low forward voltage• High power and high reliability• Available for pulse operatingApplication• IR Audio and Telephone• Communicatio...
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Item | Symbol | Ratings | Unit |
Power dissipation | PD | 75 | mW |
Forward current | IF | 50 | mA |
Pulse forward current *1 | IFP | 0.5 | A |
Reverse voltage | VR | 5 | V |
Operating temp. | Topr. | -25 ~ +85 | °C |
Storage temp. | Tstg. | -30 ~ +85 | °C |
Soldering temp. *2 | Tsol. | 240 | °C |
The KEL-3001A is GaAs infrared emitting diode that is designed for high power, low forward voltage and high speed rise / fall time. This device is optimized for speed and efficiency at emission wavelength 940nm and has a high radient efficiency over a wide range of forward current.