Features: N-Channel4.1 A, 30 V RDS(ON) = 80m @ VGS = 10 VRDS(ON) = 130m @ VGS =4.5VP-Channel-3.4 A, 30 V RDS(ON) = 130 m @ VGS =- 10 VRDS(ON) = 200 m @ VGS =-4.5VLow gate chargeHigh performance trench technology for extremely low RDS(ON).High power and handling capability in a widely used surface ...
KDS8333C: Features: N-Channel4.1 A, 30 V RDS(ON) = 80m @ VGS = 10 VRDS(ON) = 130m @ VGS =4.5VP-Channel-3.4 A, 30 V RDS(ON) = 130 m @ VGS =- 10 VRDS(ON) = 200 m @ VGS =-4.5VLow gate chargeHigh performance tren...
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Parameter |
Symbol |
N-Channel |
P-Channel |
Unit |
Drain to Source Voltage |
VDSS |
30 |
-30 |
V |
Gate to Source Voltage |
VGS |
±16 |
±20 |
V |
Drain Current Continuous (Note 1a) Drain Current Pulsed |
ID |
4.1 20 |
3.4 -20 |
A |
Power Dissipation for Dual Operation |
PD |
2 |
A | |
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
PD |
1.6 1 0.9 |
W | |
Operating junction and storage temperature range |
Tj,Tstg |
-55 to +150 |
||
Thermal Resistance Junction to Ambient (Note 1a) |
RJA |
78 |
/W | |
Thermal Resistance Junction to Case (Note 1) |
RJC |
40 |
/W |