Features: `12.5 A, 40 V. R DS(ON) = 9m @ VGS = 10 V`Low gate charge (45 nC typical)`High performance trench technology for extremely low R DS(ON)`High power and current handling capabilitySpecifications Parameter Symbol Rating Unit Drain to Source Voltage VDSS 40 V ...
KDS4470: Features: `12.5 A, 40 V. R DS(ON) = 9m @ VGS = 10 V`Low gate charge (45 nC typical)`High performance trench technology for extremely low R DS(ON)`High power and current handling capabilitySpecificat...
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Parameter |
Symbol |
Rating |
Unit |
Drain to Source Voltage |
VDSS |
40 |
V |
Gate to Source Voltage |
VGS |
+30/-20 |
V |
Drain Current Continuous (Note 1a) |
ID |
12.5 |
A |
Drain Current Pulsed |
50 |
A | |
Power dissipation (Note 1a) |
PD |
2.5 |
W |
Power dissipation (Note 1b) |
1.4 | ||
Power dissipation (Note 1c) |
1.2 | ||
Operating and Storage Temperature Range |
TJ, TSTG |
-55 to 175 |
|
Thermal Resistance Junction to Ambient (Note 1a) |
RJA |
50 |
/W |
Thermal Resistance Junction to Case (Note 1c) |
RJA |
125 |
/W |
Thermal Resistance Junction to Case (Note 1) |
RJC |
25 |
/W |