Features: `34 A, 100 V. R DS(ON) = 32m @ VGS = 10 V R DS(ON) = 35m @ VGS = 6 V`Low gate charge (57 nC typical)`Fast switching speed`High performance trench technology for extremely low RDS(ON)`High power and current handling capabilitySpecifications Parameter Symbol Rating Unit ...
KDD3670: Features: `34 A, 100 V. R DS(ON) = 32m @ VGS = 10 V R DS(ON) = 35m @ VGS = 6 V`Low gate charge (57 nC typical)`Fast switching speed`High performance trench technology for extremely low RDS(ON)`High ...
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Parameter |
Symbol |
Rating |
Unit |
Drain to Source Voltage |
VDSS |
100 |
V |
Gate to Source Voltage |
VGS |
±20 |
V |
Drain Current Continuous (Note 1) |
ID |
34 |
A |
Drain Current Pulsed |
100 |
A | |
Power dissipation @ TC=25 (Note 1) |
PD |
83 |
W |
Power dissipation @ Ta=25 (Note 1a) |
3.8 | ||
Power dissipation @ Ta=25 (Note 1b) |
1.6 | ||
Operating and Storage Temperature |
TJ, TSTG |
-55 to 175 |
|
Thermal Resistance Junction to Case |
RJC |
1.8 |
/W |
Thermal Resistance Junction to Ambient |
RJC |
96 |
/W |