Features: `rDS(ON) = 45 (Typ.), VGS = 10V, ID = 9A`Qg(tot) = 26nC (Typ.), VGS = 10V`Low Miller Charge`Low QRR Body Diode`UIS Capability (Single Pulse and Repetitive Pulse)`Qualified to AEC Q101PinoutSpecifications Item Symbol Ratings Unit Drain-Source Voltage VDSS 150 V...
KDD2572: Features: `rDS(ON) = 45 (Typ.), VGS = 10V, ID = 9A`Qg(tot) = 26nC (Typ.), VGS = 10V`Low Miller Charge`Low QRR Body Diode`UIS Capability (Single Pulse and Repetitive Pulse)`Qualified to AEC Q101Pinou...
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Item |
Symbol |
Ratings |
Unit |
Drain-Source Voltage |
VDSS |
150 |
V |
Gate to source voltage |
VGS |
±20 |
V |
Drain Current Continuous (TC = 25 , VGS = 10V) |
ID |
29 |
A |
Drain Current Continuous (TC = 100 , VGS = 10V) |
20 |
A | |
Drain Current Continuous(TC=100 ,VGS=10V,RJA=52 /W)) |
4 |
A | |
Single Pulse Avalanche Energy * |
EAS |
36 |
mJ |
Power dissipation |
PD |
135 |
W |
Derate above 25 |
PD |
0.9 |
W/ |
Operating and Storage Temperature |
TJ, TSTG |
-55 to 175 |
|
Thermal Resistance Junction to Case |
R JC |
1.11 |
/W |
Thermal Resistance Junction to Ambient to252 |
R JA |
100 |
/W |
Thermal Resistance Junction to Ambient to252,1in copper pad area |
R JA |
52 |
/W |