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KDB3632

Features: ·rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A·Qg(tot) = 84nC (Typ.), VGS = 10V·Low Miller Charge·Low QRR Body Diode·UIS Capability (Single Pulse and Repetitive Pulse)Specifications Parameter Symbo Rating Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS ...

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SeekIC No. : 004384964 Detail

KDB3632: Features: ·rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A·Qg(tot) = 84nC (Typ.), VGS = 10V·Low Miller Charge·Low QRR Body Diode·UIS Capability (Single Pulse and Repetitive Pulse)Specifications Para...

KDB3632 Data Sheet

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Part Number:
KDB3632
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

·rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A
·Qg(tot) = 84nC (Typ.), VGS = 10V
·Low Miller Charge
·Low QRR Body Diode
·UIS Capability (Single Pulse and Repetitive Pulse)


Specifications

Parameter Symbo Rating Unit
Drain to source voltage VDSS 100 V
Gate to source voltage VGSS ±20 V
Drain current-Continuous TC< 111
TA=25		 ID 80 A
12 A
Power dissipation
Derate above 25		 PD 310
2.07		 W
W/
Thermal Resistance Junction to Ambient RJA 43 /W
Thermal Resistance, Junction-to-Case RJC 0.48 /W
Channel temperature Tch 175
Storage temperature Tstg -55 to +175



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