Features: Low Gate Charge Qg results in Simple Drive RequirementImproved Gate, Avalanche and High Reapplied dv/dt RuggednessReduced rDS(ON)Reduced Miller Capacitance and Low Input CapacitanceImproved Switching Speed with Low EMISpecifications Parameter Symbol Ratings Unit Drain to...
KDB15N50: Features: Low Gate Charge Qg results in Simple Drive RequirementImproved Gate, Avalanche and High Reapplied dv/dt RuggednessReduced rDS(ON)Reduced Miller Capacitance and Low Input CapacitanceImprove...
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Parameter |
Symbol |
Ratings |
Unit | |
Drain to source voltage |
VDSS |
500 |
V | |
Gate to source voltage |
VGSS |
±30 |
V | |
Drain current TC=25 |
ID |
15 |
A | |
Drain current-pulsed |
Idp |
60 |
A | |
Power dissipation Derate above 25 |
PD |
300 2 |
A | |
Thermal Resistance Junction to Ambient |
RJA |
62 |
W W/ | |
Channel Temperature |
Tch |
175 |
||
Storage Temperature |
Tstg |
-55 to +150 |