KD424520HB

DescriptionThe KD424520HB is a kind of high-beta dual darlington transistor module. KD424520HB is designed for use in switching applications. The KD424520HB is a high power device and isolated. KD424520HB inlcudes two darlington transistors with each transistor having a reverse parallel connected ...

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SeekIC No. : 004384932 Detail

KD424520HB: DescriptionThe KD424520HB is a kind of high-beta dual darlington transistor module. KD424520HB is designed for use in switching applications. The KD424520HB is a high power device and isolated. KD42...

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Part Number:
KD424520HB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Description

The KD424520HB is a kind of high-beta dual darlington transistor module. KD424520HB is designed for use in switching applications. The KD424520HB is a high power device and isolated. KD424520HB inlcudes two darlington transistors with each transistor having a reverse parallel connected high-speed diode. The typical applications include AC motor control, DC motor control, switching power supplies and inverters.

There are some features of KD424520HB as follows: (1)isolated mounting; (2)planar chips; (3)discrete fast recovery feedback diode; (4)very high gain (hFE); (5)quick connect signal terminals; (6)base-emitter speed-up diodes; (7)UL recognized.

What comes next is about the absolute maximum ratings of KD424520HB, Tj=25 unless otherwise specified: (1)junction temperature, Tj: -40 to +150; (2)storage temperature, Tstg: -40 to +125; (3)collector-emitter sustaining voltage, VCEO(SUS): 450 V; (4)collector-emitter sustaining voltage when VBE=-2 V, VCEO(SUS): 600 V; (5)collector-base voltage, VCBO: 600 V; (6)emitter-base voltage, VEBO: 7 V; (7)collector-emitter voltage when VBE=-2 V, VCEV: 600 V; (8)continuous collector current, IC: 200 A; (9)diode forward current, IFM: 200 A; (10)continuous base current, IB: 12 A; (11)diode surge current, IFSM: 2000 A; (12)power dissipation (each transistor), Pt: 1240 W; (13)V isolation, VRMS: 2500 V.




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