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KCD32

Features: ·For surface mounted applications.·Low profile package.·Built-in strain relief.·Metal silicon junction, majority carrier conduction.·Low power loss, high efficiency.·High current capability, low forward voltage drop.·High surge capability.Specifications PARAMETER Symbol KCD32 KCD...

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SeekIC No. : 004384828 Detail

KCD32: Features: ·For surface mounted applications.·Low profile package.·Built-in strain relief.·Metal silicon junction, majority carrier conduction.·Low power loss, high efficiency.·High current capabilit...

KCD32 Data Sheet

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Part Number:
KCD32
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·For surface mounted applications.
·Low profile package.
·Built-in strain relief.
·Metal silicon junction, majority carrier conduction.
·Low power loss, high efficiency.
·High current capability, low forward voltage drop.
·High surge capability.




Specifications

PARAMETER Symbol KCD32 KCD34 KCD36 KCD310 UNITS
Maximum Recurrent Peak Reverse Voltage VRRM 20 40 60 100 V
Maximum RMS Voltage VRWS 14 28 42 70 V
Maximum DC Blocki ng Voltage VDC 20 40 60 100 V
Maximum Average Forward Current
 IAV 3 A
Peak Forward Surge Current : 8.3ms si ngle half si ne-wave superimposed on rated load(JEDEC method) IFSM 80 A
Maximum Forward Voltage at 3.0A *1 VF 0.5 0.7 0.85 V
Maximum DC Reverse Current at TJ=25
Rated DC Blocki ng Voltage TJ=100		 IR 0.5 mA
Typical Thermal Resistance RJA
RJL

 55
17		 / W
Operating junction temperature range TJ -55 to +125 -55 to +150 ns
Storage Temperature Range TSTG -55 to +150
* 1. Pulse test: 300ms pulse width, 1% duty cycle.




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