Features: ·For surface mounted applications.·Low profile package.·Built-in strain relief.·Metal silicon junction, majority carrier conduction.·Low power loss, high efficiency.·High current capability, low forward voltage drop.·High surge capability.Specifications PARAMETER Symbol KCD32 KCD...
KCD32: Features: ·For surface mounted applications.·Low profile package.·Built-in strain relief.·Metal silicon junction, majority carrier conduction.·Low power loss, high efficiency.·High current capabilit...
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PARAMETER | Symbol | KCD32 | KCD34 | KCD36 | KCD310 | UNITS |
Maximum Recurrent Peak Reverse Voltage | VRRM | 20 | 40 | 60 | 100 | V |
Maximum RMS Voltage | VRWS | 14 | 28 | 42 | 70 | V |
Maximum DC Blocki ng Voltage | VDC | 20 | 40 | 60 | 100 | V |
Maximum Average Forward Current |
IAV | 3 | A | |||
Peak Forward Surge Current : 8.3ms si ngle half si ne-wave superimposed on rated load(JEDEC method) | IFSM | 80 | A | |||
Maximum Forward Voltage at 3.0A *1 | VF | 0.5 | 0.7 | 0.85 | V | |
Maximum DC Reverse Current at TJ=25 Rated DC Blocki ng Voltage TJ=100 |
IR | 0.5 | mA | |||
Typical Thermal Resistance | RJA RJL |
55 17 |
/ W | |||
Operating junction temperature range | TJ | -55 to +125 | -55 to +150 | ns | ||
Storage Temperature Range | TSTG | -55 to +150 |