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KC74129B

Features: • High Sensitivity• Optical Size 1/4 inch Format• No Adjust Substrate Bias• Variable Speed Electronic Shutter (1/60, 1/100 ~ 1/10,000sec)• Low Dark Current• Horizontal Register 3.3 to 5.0V Drive• 14pin Ceramic DIP Package• Field Integration...

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SeekIC No. : 004384799 Detail

KC74129B: Features: • High Sensitivity• Optical Size 1/4 inch Format• No Adjust Substrate Bias• Variable Speed Electronic Shutter (1/60, 1/100 ~ 1/10,000sec)• Low Dark Current...

KC74129B Data Sheet

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Part Number:
KC74129B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Features:

• High Sensitivity
• Optical Size 1/4 inch Format
• No Adjust Substrate Bias
• Variable Speed Electronic Shutter
   (1/60, 1/100 ~ 1/10,000sec)
• Low Dark Current
• Horizontal Register 3.3 to 5.0V Drive
• 14pin Ceramic DIP Package
• Field Integration Read Out System
• No DC Bias on Reset Gate


Specifications

Characteristics
Symbols
Min.
Max.
Unit
Supply voltage SUB - GND
-0.3
40
V
VDD, VOUT - SUB
-40
10
V
Vertical clock input voltage V1, V3, - GND
-0.3
30
V
V2, V4 - GND
-0.3
17
V
V1, V3, - VL
-0.3
30
V
V2, V4 - VL
-0.3
17
V
V1, V2, V3, V4 - SUB
-40
10
V
Horizontal clock input voltage H1, H2 - VL
-0.3
7
V
H1, H2 - SUB
-30
7
V
Voltage dierence between vertical and
horizontal clock input pins		 V1, V2, V3, V4
15
V
H1, H2
16
V
H1, H2 - V4
-17
16
V
Output clock input voltage RG- GND
-0.3
16
V
RS - SUB
-40
16
V
Protection circuit bias voltage VL - SUB
-40
10
V
Operating temperature TOP
-10
60
°C
Storage temperature TSTG
-30
80
°C


NOTE: The device can be destroyed, if the applied voltage or temperature is higher than the absolute maximum rating voltage or temperature.




Description

The KC74129B is an interline transfer CCD area image sensor developed for CCIR 1/4 inch optical format video cameras, surveillance cameras, object detectors and image pattern recognizers. High sensitivity is on-chip micro lenses and HAD (Hole Accumulated Diode) photosensors. This chip features a field integration read out system and an electronic shutter with variable charge storage time.




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