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KBP200G

Features: · Glass Passivated Die Construction· Low Forward Voltage Drop · High Current Capability· High Reliability· High Surge Current Capability · Ideal for Printed Circuit BoardsSpecifications Characteristic Symbol KBP200G KBP201G KBP202G KBP204G KBP206G KBP208G K...

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KBP200G: Features: · Glass Passivated Die Construction· Low Forward Voltage Drop · High Current Capability· High Reliability· High Surge Current Capability · Ideal for Printed Circuit BoardsSpecifications ...

KBP200G Data Sheet

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Part Number:
KBP200G
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

· Glass Passivated Die Construction
· Low Forward Voltage Drop
· High Current Capability
· High Reliability
· High Surge Current Capability
· Ideal for Printed Circuit Boards


Specifications

Characteristic
Symbol
KBP
200G
KBP
201G
KBP
202G
KBP
204G
KBP
206G
KBP
208G
KBP
210G
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current
@TA = 50°C
IO
2.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
60
A
Forward Voltage (per diode) @IF = 2.0A
VFM
1.1
V
TPeak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @TC = 100°C
IRM
5.0
500
A
Rating for Fusing (t<8.3ms)
I2t
15
A2s
Typical Thermal Resistance
CJ
25
pF
Typical Thermal Resistance (Note )
RJA
30
K/W
Operating and Storage Temperature Range
Tj,TSTG
-55 to +165

°C


Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
3. Thermal resistance junction to ambient mounted on PC board with 12mm2 copper pad.




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